Graphene-enhanced Raman scattering has been studied as an optical technique related to the selective electron transfer from graphene to the valence band of the contacted molecule, inducing a pileup of electrons within the conduction band and a “photogating effect” for subsequently illuminated light. Herein, we studied the Raman spectroscopy of CsPbI₃ nanorods sandwiched between two layers of graphene, revealing that weak coherent lasing also occurs. The photoluminescence intensity of α-phase CsPbI₃ nanorods drastically decreased with increasing graphene coverage, particularly on the top, leading to Raman modes at the first (∼241 and ∼312 cm⁻¹) and second (∼640 cm⁻¹) overtones of polymeric iodides, as well as at ∼3492 cm⁻¹. First-principle calculations reveal that the ∼3492-cm⁻¹ mode originates from the stimulated coherent light emissions of the highly populated electrons accumulated in the CsPbI₃ conduction band, which form because of the electronic resonance induced in the Pb and I degenerate states.

石墨烯增强的拉曼散射已经作为一种光学技术进行了研究，该技术与选择性电子从石墨烯向接触分子的价带的选择性转移有关，在导带内引起电子堆积，并为随后的照明光带来“光门效应”。在本文中，我们研究了夹在两层石墨烯之间的CsPbI ₃纳米棒的拉曼光谱，发现还发生了弱相干激光。随着石墨烯覆盖率的增加，α相CsPbI ₃纳米棒的光致发光强度急剧下降，尤其是在顶部，导致在第一（〜241和〜312 cm ^-1）和第二（〜640 cm ^-1）泛音的拉曼模式。聚合碘化物，以及〜3492 cm^-1。第一性原理计算表明，〜3492-cm ^-1模式源自CsPbI ₃导带中积累的高密度电子的受激相干光发射，这是由于在Pb和I简并态中引发的电子共振而形成的。