Gallium oxide (Ga₂O₃) is an emerging wide‐bandgap transparent conductive oxide (TCO) with potential applications for high‐power optical systems. Herein, Ga₂O₃ fabricated nanostructures are described, which demonstrate high‐power laser induced damage threshold (LIDT). Furthermore, the demonstration of an electron accelerator based on Ga₂O₃ gratings is reported. These unique Ga₂O₃ nanostructures provide acceleration gradients exceeding those possible with conventional RF accelerators due to the high breakdown threshold of Ga₂O₃. In addition, the laser damage threshold and acceleration performance of a Ga₂O₃‐based dielectric laser accelerator (DLA) are compared with those of a DLA based on sapphire, a material known for its high breakdown strength. Finally, the potential of Ga₂O₃ thin‐film coatings as field reduction layers for Si nanostructures is shown; they potentially improve the effective LIDT and performance of Si‐based DLAs and other high‐power optical structures. These results could provide a foundation for new high‐power optical applications with Ga₂O₃.

中文翻译：

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用于高功率光学应用的氧化镓

氧化镓（Ga ₂ O ₃）是一种新兴的宽带隙透明导电氧化物（TCO），具有在高功率光学系统中的潜在应用。本文中，描述了Ga ₂ O ₃制备的纳米结构，其展示了高功率激光诱导的损伤阈值（LIDT）。此外，还报道了基于Ga ₂ O ₃光栅的电子加速器的演示。由于Ga ₂ O ₃的高击穿阈值，这些独特的Ga ₂ O ₃纳米结构提供的加速度梯度超过了常规RF加速器可能达到的梯度。。此外，将基于Ga ₂ O ₃的介电激光加速器（DLA）的激光损伤阈值和加速性能与基于蓝宝石的DLA进行了比较，该材料以高击穿强度而闻名。最后，显示了Ga ₂ O ₃薄膜涂层作为Si纳米结构场减小层的潜力。它们潜在地改善了基于硅的DLA和其他大功率光学结构的有效LIDT和性能。这些结果可为使用Ga ₂ O _3的新型高功率光学应用奠定基础。