Abstract

Sb-doped SnO₂ (ATO) thin films were synthesized via the sol–gel dip-coating method on glass substrates. The XPS and XRD spectra showed that Sb atoms were successfully incorporated into the SnO₂ lattice and mostly existed in the form of Sb⁵⁺ (~ 90%) in 1 at.% ATO thin films annealed in air and further annealed in vacuum. The transmittance spectra revealed that the average transmittance was more than 75% at the wavelength range of 325–700 nm. The average sheet resistancewas 14.05 kΩ/□ in 1 at.% ATO thin films annealing in air and much less than undoped SnO₂. The electric property was better when ATO thin films were further annealing vacuum compared to annealing in air. The average sheet resistance and resistivity of 1 at.% ATO thin films were 2.42 kΩ/□ and 0.035 Ω cm, respectively. The PL showed that electrons transition from a shallow level of V_O to the minimum level of conduction band (CBM) increased with increasing of Sb³⁺ ions. The maximum level of valence band (VBM) and CBM level positions were mainly affected by Sb³⁺ and Sb⁵⁺ energy levels after air annealing, respectively. The behavior of surface carrier transport was investigated after further vacuum annealing. The CBM–VBM level position mainly was affected by V_O energy level after further vacuum annealing. It was further proved by the Hall carrier concentration and the electrochemical impedance spectroscopy (EIS).

中文翻译：

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Sb掺杂对SnO 2薄膜结构和光电性能的影响

摘要

通过溶胶-凝胶浸涂法在玻璃基板上合成了掺锑的SnO ₂（ATO）薄膜。XPS和XRD光谱表明，Sb原子已成功地掺入SnO ₂晶格中，并且在1 at。％ATO薄膜中以Sb ⁵⁺（^〜90％）的形式存在，并在空气中退火，然后在真空中进一步退火。透射光谱表明，在325–700 nm的波长范围内，平均透射率超过75％。在空气中退火的1 at。％ATO薄膜中的平均薄层电阻为14.05kΩ/□，远小于未掺杂的SnO ₂。与在空气中退火相比，当将ATO薄膜进一步进行真空退火时，电性能更好。1 at。％ATO薄膜的平均薄层电阻和电阻率分别为2.42kΩ/□和0.035Ωcm。PL显示电子随着Sb ³⁺离子的增加而从浅的V _O跃迁到最小的导带（CBM）跃迁。在空气退火后，最大价带（VBM）和CBM能级位置分别受Sb ³⁺和Sb ⁵⁺能级的影响。在进一步的真空退火之后，研究了表面载流子传输的行为。CBM–VBM水平位置主要受V _O影响进一步真空退火后的能级。霍尔载流子浓度和电化学阻抗谱（EIS）进一步证明了这一点。