In this paper, a nanoscale vacuum channel transistor (NVCT) with a side-gate structure is fabricated by standard electron beam lithography. The states of the proposed NVCTs could be effectively modulated by side-gate bias, exhibiting a drive current (>400 nA), low work voltage (<20 V) and high on/off current ratio (>10 3 ). Moreover, we further optimize the shapes of the electrodes, demonstrating that the electric performance is closely related to the structure parameters. The side-gate NVCT offers an alternative method to fulfill the on-chip vacuum devices with high integration.

中文翻译：

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侧栅纳米级真空沟道晶体管的电性能和结构优化研究

在本文中，通过标准电子束光刻技术制造了具有侧栅结构的纳米级真空沟道晶体管（NVCT）。提议的NVCT的状态可以通过侧栅偏置有效地调制，表现出驱动电流（> 400 nA），低工作电压（<20 V）和高导通/关断电流比（> 10 3）。此外，我们进一步优化了电极的形状，表明电性能与结构参数密切相关。侧栅NVCT提供了另一种方法来实现具有高集成度的片上真空器件。