The systematic investigation of In³⁺ ions doped ZnGa₂O₄ applying to photocatalytic H₂ evolution (PHE) under simulated solar-light irradiation was first reported here. A series of Zn(In_xGa_1-x)₂O₄ (x = 0 to 0.4) solid-solutions were obtained by sol-gel method and characterized by XRD, SEM, elemental mapping, XPS, UV–Vis DRS and N₂ adsorption measures. The concentration of In³⁺ ions remarkably enhanced the light-harvesting capability of Zn(In_xGa_1-x)₂O₄ solid-solutions in the visible-light region, and successfully regulated the positions of the CB-bottom potential, ultimately improving the photocatalytic capabilities under simulated solar-light irradiation. Among composites containing different In³⁺ ions dosages, Zn(In_0.1Ga_0.9)₂O₄ demonstrated the most excellent photocatalytic capability for solar-light-driven PHE reaction (H₂: 240.6 μmol/h/g), in which the stability of the Zn(In_0.1Ga_0.9)₂O₄ was confirmed by several techniques.

本文首次报道了In ³⁺掺杂ZnGa ₂ O ₄在模拟太阳光照射下应用于光催化H ₂析出（PHE）的系统研究。 通过溶胶-凝胶法获得了一系列的Zn（In _x Ga _{1- x}）₂ O ₄（x = 0至0.4）固溶体，并通过XRD，SEM，元素映射，XPS，UV-Vis DRS和N表征₂吸附措施。In ³⁺离子的浓度显着增强了Zn（In _x Ga _{1- x}）₂ O的光捕获能力在可见光区域有_4种固溶体，并成功调节了CB底部电势的位置，最终提高了模拟太阳光照射下的光催化能力。在含有不同复合材料³⁺离子的剂量，锌（在_0.1镓_0.9）₂ ø ₄证明了太阳能光驱动PHE反应最优异的光催化能力（H ₂：240.6  μ摩尔/小时/克），其中，所述通过几种技术证实了Zn（In _0.1 Ga _0.9）₂ O _4的稳定性。