Abstract GaAsSb based materials have become the promising system for infrared semiconductor lasers and detectors. In this article, the strain, energy band structures and photoluminescence (PL) of GaAs0.92Sb0·08/Al0.3Ga0.7As strained quantum wells (QWs) grown with molecular beam epitaxy are systematically analyzed both theoretically and experimentally. The theoretical results are derived by Kane's model and k⋅p method, and the optical properties of a high-quality GaAs0.92Sb0·08/Al0.3Ga0.7As strained QWs sample are thoroughly investigated by excitation- and temperature-dependent PL measurements. The theoretical results show the strain has significant influence on the band structure of QWs. In experimental part, it is found that the light-hole exciton emission coexists with the heavy-hole exciton line in the temperature range of 50 K–300 K. However, the emission of localized excitons, which is caused by the nonuniformity of component in the GaAsSb well layer, takes over the light-hole exciton emission at lower temperatures (

中文翻译：

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GaAs衬底上生长的GaAs0.92Sb0.08/Al0.3Ga0.7As多量子阱的应变、能带和光致发光

摘要 GaAsSb 基材料已成为有前途的红外半导体激光器和探测器系统。本文从理论和实验两方面系统地分析了分子束外延生长的GaAs0.92Sb0·08/Al0.3Ga0.7As应变量子阱(QWs)的应变、能带结构和光致发光(PL)。理论结果是通过 Kane 模型和 k⋅p 方法得出的，并且通过激发和温度相关的 PL 测量彻底研究了高质量 GaAs0.92Sb0·08/Al0.3Ga0.7As 应变 QWs 样品的光学特性。理论结果表明应变对QWs的能带结构有显着影响。在实验部分，发现在 50 K-300 K 的温度范围内，轻空穴激子发射与重空穴激子线共存。