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Molybdenum Disulphide Heterointerfaces as Potential Materials for Solar Cells, Energy Storage, and Hydrogen Evolution
Energy Technology ( IF 3.8 ) Pub Date : 2020-01-16 , DOI: 10.1002/ente.201901299
Smita Gajanan Naik 1 , Mohammad Hussain K. Rabinal 1
Affiliation  

Molybdenum disulphide (MoS2), an ideal semiconductor, belongs to the group of 40 well‐identified transition metal dichalcogenides. These have unique chemical bonding; in an ideal case they do not feature dangling bonds and hence possess a layered‐like atomic structure, such that strong intraplane and weak interplane bondings exist. Hence, MoS2 can be peeled into a precisely controlled number of layers; the bulk with E g = 1.2 eV can be reduced to a unit cell‐thick layer (monolayer) with E g = 1.89 eV. However, in reality, both bulk and monolayers possess many types of atomic defects associated with in‐plane, edge, grain boundaries, etc. As a result, MoS2 exhibits many interesting and tunable optoelectronic properties suitable for a wide range of applications. Interestingly, its basic polyhedral form (MoS6) undergoes a structural change that leads to many polymorphic phases, the three in bulk and the five in monolayer. Theoretical predictions and experimental observations clearly confirm that MoS2 and its interfaces with other materials can be significantly important for energy conversion and storage applications, which are emerging and critically important topics of modern science and society. This Review provides an overview of the past few years of research and developments on these topics.

中文翻译:

二硫化钼异质界面作为太阳能电池,能量存储和氢生成的潜在材料

二硫化钼(MoS 2)是一种理想的半导体,属于40种公认的过渡金属二卤化物。它们具有独特的化学键;在理想情况下,它们不具有悬空键,因此具有层状原子结构,因此存在强的平面内键合和弱的平面间键合。因此,可以将MoS 2剥成精确控制的层数;E g  = 1.2 eV的体积可以减小为E g  = 1.89 eV的晶胞厚层(单层)。但是,实际上,体层和单层都具有与面内,边缘,晶界等相关的许多类型的原子缺陷。因此,MoS 2具有许多有趣且可调谐的光电特性,适合广泛的应用。有趣的是,它的基本多面体形式(MoS 6)发生结构变化,导致许多多晶型相,即本体的三个和五个单层的。理论预测和实验观察清楚地证实,MoS 2及其与其他材料的界面对于能量转换和存储应用非常重要,而能量转换和存储应用是现代科学和社会正在兴起且至关重要的主题。这篇综述概述了过去几年中这些主题的研究和开发。
更新日期:2020-01-16
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