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Microwave irradiation assisted rapid growth of ZnO nanorods over metal coated/electrically conducting substrate
Materials Letters ( IF 3 ) Pub Date : 2020-04-01 , DOI: 10.1016/j.matlet.2020.127370
Sanjaya Brahma , S.A. Shivashankar

Abstract In-spite of intense research in the growth of ZnO over the years, the direct crystallization of ZnO on a metal coated/electrically conducting substrate by a solution growth process has not been carried out. We report one pot, low temperature (≤100 °C) and rapid growth (5 min) of ZnO nanorods over an electrically conducting substrate by using microwave irradiation assisted thin film deposition in a liquid medium without the use of any seed layer. High density (2 × 109/cm2), c-axis oriented, uniform and continuous ZnO nanorod films are grown over Cr/Si [chromium coated Si(1 0 0)] and ITO/glass (indium tin oxide coated glass) substrates whereas aluminium (Al) and gold (Au) coated Si yield non uniform film with mixed texture. Microwave irradiation for 5 min ensures strongly oriented growth of ZnO over Cr/Si and ITO/glass and mixed texture for semiconducting substrates (Si/Ge). The initial nucleation of ZnO nanorods may be due to the formation of thin amorphous oxide (Cr2O3) layer over Cr film, which subsequently changes to hydroxides (CrOH2, CrOH3) in contact with water.

中文翻译:

微波辐射辅助 ZnO 纳米棒在金属涂层/导电基底上的快速生长

摘要 尽管多年来对 ZnO 的生长进行了大量研究,但尚未通过溶液生长工艺在金属涂层/导电衬底上直接结晶 ZnO。我们通过在液体介质中使用微波辐射辅助薄膜沉积,在不使用任何种子层的情况下,报告了一锅、低温(≤100°C)和快速生长(5 分钟)的 ZnO 纳米棒在导电基板上。高密度 (2 × 109/cm2)、c 轴取向、均匀且连续的 ZnO 纳米棒薄膜生长在 Cr/Si [镀铬 Si(1 0 0)] 和 ITO/玻璃(氧化铟锡涂层玻璃)基板上,而铝 (Al) 和金 (Au) 涂覆的 Si 产生具有混合纹理的不均匀薄膜。微波照射 5 分钟可确保 ZnO 在 Cr/Si 和 ITO/玻璃上强烈定向生长,并确保半导体衬底 (Si/Ge) 的混合纹理。ZnO 纳米棒的初始成核可能是由于在 Cr 膜上形成了薄的非晶氧化物 (Cr2O3) 层,随后与水接触后变成氢氧化物 (CrOH2, CrOH3)。
更新日期:2020-04-01
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