Abstract Copper-doped MoO3 thin films were prepared via electrodeposition technique. The techniques adopted for investigating the structural, optical, electrical and magnetic properties of both undoped and copper-doped MoO3 thin films include X-ray diffractometry, UV–visible spectroscopy, four-point probe and vibrating sample magnetometry respectively. Nanocrystalline homogenous grains with polycrystalline orthorhombic (α-MoO3) nature were obtained. The optical plots recorded decreased band gap energy from 3.44 eV to 3.27 eV, magnetic studies showed ferromagnetic properties of the doped samples while the electrical study revealed the highest conductivity of 1.5 Ωcm−1. Doping with Cu has the potentiality of increasing the conductivity of MoO3 thereby enhancing its application in photocells.

中文翻译：

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铜掺杂电沉积 MoO3 薄膜的光、电和磁性能

摘要 采用电沉积技术制备了掺铜MoO3薄膜。用于研究未掺杂和掺杂铜的 MoO3 薄膜的结构、光学、电学和磁学性质的技术分别包括 X 射线衍射、紫外-可见光谱、四点探针和振动样品磁强计。获得了具有多晶正交（α-MoO3）性质的纳米晶均质晶粒。光学图记录的带隙能量从 3.44 eV 降低到 3.27 eV，磁性研究显示掺杂样品具有铁磁特性，而电学研究显示最高电导率为 1.5 Ωcm-1。掺杂 Cu 有可能提高 MoO3 的电导率，从而增强其在光电池中的应用。