Li_1.5Al_0.5Ge_1.5(PO₄)₃ (LAGP) solid electrolyte films are successfully prepared on silicon substrates by radio frequency magnetron sputtering for the first time. X-ray diffraction, energy dispersive spectroscopy, and scanning electron microscopy are used to analyze the composition, structure, and morphology of the LAGP films, respectively. The effects of deposition conditions on the ion transport properties of the LAGP thin films are also evaluated via electrochemical impedance spectroscopy measurements. An evolution from a uniform and smooth amorphous structure to a coarse-grained structure of the surface morphology is observed for the films prepared at different temperatures. The results show that low growth temperature is beneficial to the formation of amorphous LAGP films with smooth surface and uniform thickness, and crystalline films with preferred orientation of (104) crystal plane are successfully deposited when the substrate temperature reaches 500 °C. The LAGP amorphous film with a thickness of 1.2 μm deposited at 200 °C exhibits a high ionic conductivity of 1.29 × 10⁻⁶ Scm⁻¹. The ionic activation energy of the sample is determined to be 0.25 eV based on Arrhenius equation, indicating good ionic conductivity of the LAGP film. The good ionic conductivity of amorphous LAGP is attributed to its open and disordered structure with large excessive volumes.

Li _1.5 Al _0.5 Ge _1.5（PO ₄）₃首次通过射频磁控溅射在硅基板上成功制备（LAGP）固体电解质膜。X射线衍射，能量色散光谱和扫描电子显微镜分别用于分析LAGP膜的组成，结构和形态。沉积条件对LAGP薄膜离子传输性能的影响也可以通过电化学阻抗谱测量来评估。对于在不同温度下制备的膜，观察到了从表面形态的均匀且光滑的无定形结构到粗晶粒结构的演变。结果表明，低生长温度有利于形成表面光滑，厚度均匀的非晶态LAGP薄膜；当衬底温度达到500°C时，可以成功沉积具有（104）晶面优选取向的晶体膜。在200°C下沉积的厚度为1.2μm的LAGP非晶膜具有1.29×10的高离子电导率^-6 Scm ^-1。根据Arrhenius方程确定样品的离子活化能为0.25 eV，表明LAGP膜具有良好的离子电导率。无定形LAGP的良好离子电导率归因于其开放且无序的结构，且体积过大。