In this study, we report on the use of a two‐stage annealing treatment at 1100°C coupled to reactive Spark Plasma Sintering to reduce the synthesis temperature of InGaO₃(ZnO)_m (m = 1 to 9) dense polycrystalline pellets below 1200°C, in order to suppress the volatilization of ZnO and get a better control of the crystalline quality of the pellets. We show that using this treatment, dense single‐phase pellets can be prepared with randomly oriented grains. Besides, we evidence a monotonic evolution of the band gap in the series from 3.27 eV in InGaO₃(ZnO) to 3.02 eV in InGaO₃(ZnO)₉, as well as a non‐monotonic evolution of the lattice thermal conductivity that reaches a minimum for InGaO₃(ZnO)₃, lower than 2 W m⁻¹ K⁻¹ above 350°C. Last, we propose a procedure for the high‐temperature measurement of the thermal diffusivity of oxides by the laser flash method to avoid possible reactions between the measured material and the graphite spray.

中文翻译：

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SPS辅助合成的InGaO3（ZnO）m陶瓷以及m对带隙和热导率的影响

在这项研究中，我们报告了在1100°C下采用两阶段退火处理与反应性放电等离子烧结相结合的方法，以降低 1200以下的InGaO ₃（ZnO）_m（m = 1至9）致密多晶颗粒的合成温度°C，以抑制ZnO的挥发并更好地控制颗粒的结晶质量。我们表明，使用这种处理方法，可以制备具有随机取向晶粒的致密单相微丸。此外，我们证明了带隙在InGaO ₃（ZnO）中的3.27 eV到InGaO ₃（ZnO）_9中的3.02 eV的单调演变，以及达到a的晶格热导率的非单调演变。 InGaO的最小值₃（ZnO）₃，在350℃以上低于2 W m ^-1  K ^-1。最后，我们提出了一种通过激光闪光法高温测量氧化物热扩散率的程序，以避免被测材料与石墨喷雾之间的可能反应。