当前位置: X-MOL 学术arXiv.cs.ET › 论文详情
Optimizing the Write Fidelity of MRAMs
arXiv - CS - Emerging Technologies Pub Date : 2020-01-11 , DOI: arxiv-2001.03803
Yongjune Kim; Yoocharn Jeon; Cyril Guyot; Yuval Cassuto

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for large-scale deployment of MRAMs. In this paper, we formulate an optimization problem for maximizing the memory fidelity given energy constraints, and propose a biconvex optimization approach to solve it. The basic idea is to allocate non-uniform write pulses depending on the importance of each bit position. The fidelity measure we consider is minimum mean squared error (MSE), for which we propose an iterative water-filling algorithm. Although the iterative algorithm does not guarantee global optimality, we can choose a proper starting point that decreases the MSE exponentially and guarantees fast convergence. For an 8-bit accessed word, the proposed algorithm reduces the MSE by a factor of 21.
更新日期:2020-01-14

 

全部期刊列表>>
施普林格自然
最近合集,配们化学
欢迎访问IOP中国网站
GIANT
自然职场线上招聘会
ACS ES&T Engineering
ACS ES&T Water
屿渡论文,编辑服务
何川
苏昭铭
陈刚
姜涛
李闯创
复旦大学
刘立明
隐藏1h前已浏览文章
课题组网站
新版X-MOL期刊搜索和高级搜索功能介绍
ACS材料视界
天合科研
x-mol收录
上海纽约大学
曾林
天津大学
何振宇
史大永
吉林大学
卓春祥
张昊
刘冬生
试剂库存
down
wechat
bug