Many key electronic technologies (e.g., large‐scale computing, machine learning, and superconducting electronics) require new memories that are at the same time fast, reliable, energy‐efficient, and of low‐impedance, which has remained a challenge. Nonvolatile magnetoresistive random access memories (MRAMs) driven by spin–orbit torques (SOTs) have promise to be faster and more energy‐efficient than conventional semiconductor and spin‐transfer‐torque magnetic memories. It is reported that the spin Hall effect of low‐resistivity Au_0.25Pt_0.75 thin films enables ultrafast antidamping‐torque switching of SOT‐MRAM devices for current pulse widths as short as 200 ps. If combined with industrial‐quality lithography and already‐demonstrated interfacial engineering, an optimized MRAM cell based on Au_0.25Pt_0.75 can have energy‐efficient, ultrafast, and reliable switching, for example, a write energy of <1 fJ (<50 fJ) for write error rate of 50% (<10⁻⁵) for 1 ns pulses. The antidamping torque switching of the Au_0.25Pt_0.75 devices is ten times faster than expected from a rigid macrospin model, most likely because of the fast micromagnetics due to the enhanced nonuniformity within the free layer. The feasibility of Au_0.25Pt_0.75‐based SOT‐MRAMs as a candidate for ultrafast, reliable, energy‐efficient, low‐impedance, and unlimited‐endurance memory is demonstrated.

中文翻译：

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基于低电阻自旋霍尔金属Au0.25Pt0.75的高能效超快SOT-MRAM

许多关键的电子技术（例如大规模计算，机器学习和超导电子产品）需要新的存储器，这些存储器同时又要快速，可靠，节能且低阻抗，这仍然是一个挑战。自旋轨道转矩（SOT）驱动的非易失性磁阻随机存取存储器（MRAM）有望比传统的半导体和自旋转移转矩磁存储器更快，更节能。据报道，低电阻率Au _0.25 Pt _0.75的自旋霍尔效应薄膜可实现SOT-MRAM器件的超快速抗阻尼转矩切换，电流脉冲宽度短至200 ps。如果结合工业质量的光刻技术和已经演示过的界面工程，基于Au _0.25 Pt _0.75的优化MRAM单元可以实现节能，超快和可靠的切换，例如，写入能量<1 fJ（<50 fJ ）表示1 ns脉冲的写入错误率为50％（<10 ^-5）。Au _0.25 Pt _0.75器件的抗阻尼转矩切换速度比刚性大旋转模型的预期速度快十倍，这很可能是由于自由层中增强的不均匀性导致了快速的微磁学。Au _0.25 Pt的可行性_展示了基于_0.75的SOT-MRAM作为超快速，可靠，节能，低阻抗和无限耐力存储器的候选者。