The memristor, a two-terminal memory device with units of resistance, has continued to gain momentum as simpler and more versatile memristive devices are discovered. Amorphous metal-oxide devices have emerged as potential replacements for organic and silicon materials in thin-film electronics. This work presents memristive devices based on amorphous TiO_x which were synthesized using a simplified sol-gel process that does not require a dry nitrogen flow step to fabricate amorphous films of titanium oxide (TiO_x) for memristive devices. This simplified process significantly decreases the cost and complexity of the fabrication of memristive devices. The memristive behavior was characterized by I-V curves and read-write sequential pulses. We report on the effects of different TiO_x layers on I-V curve behavior, stability, aging of the devices as well as the influence of interfaces and electrode materials in the memristive properties. Devices made as a stack of copper electrode, different TiO_x layers and aluminum electrode showed best results for on/off ratio than other devices in this work, as well better stability of resistive switching properties.

忆阻器是一种具有电阻单位的两端存储器件，随着发现了更简单，功能更广泛的忆阻器件，其势头持续增强。非晶态金属氧化物器件已经成为薄膜电子产品中有机和硅材料的潜在替代品。这项工作提出了一种基于非晶TiO _x的忆阻器件，该器件使用简化的溶胶-凝胶工艺合成，不需要干氮气流步骤即可制造用于忆阻器件的氧化钛（TiO _x）非晶膜。这种简化的工艺大大降低了忆阻器件的制造成本和复杂性。忆阻行为的特征在于IV曲线和读写顺序脉冲。我们报告了不同TiO的影响_x层对IV曲线的行为，稳定性，器件的老化以及界面和电极材料对忆阻性能的影响。在这项工作中，以铜电极，不同的TiO _x层和铝电极的堆叠形式制成的器件在开/关比方面显示出最佳结果，并且电阻开关特性的稳定性更高。