Abstract Zn-doped Ga2O3 nanostructures were synthesized by thermal evaporation. SEM results show that there are plenty of nanorods in the samples. The EDS analysis of the samples demonstrate that the nanostructures are mainly composed of Ga and O elements, and a small amount of Zn element is also observed. The Raman spectra indicate that the samples still keep the monoclinic structure consistent with the pure Ga2O3 crystal structure. A broad-band blue-green luminescence centered around at 2.3 eV was observed at room temperature. The luminescence intensity of the PL spectra of the Zn-doped Ga2O3 nanostructures varied with the amount of Zn doping. Besides, the PL spectra of the Zn-doped Ga2O3 nanostructures have a red-shift compared to that of the pure Ga2O3 nanostructures. The analysis of the PL spectrum of Zn-doped Ga2O3 nanostructures with a mass ratio of Ga2O3 powder to zinc powder of 10:1 indicates that the broad-band blue-green luminescence of the Zn-doped Ga2O3 nanostructures is composed of one blue luminescence (2.8 eV, 450 nm) band, one green luminescence (2.3 eV, 533 nm) band, one yellow luminescence (2.1 eV, 592 nm) band, and one red luminescence (1.9 eV, 638 nm) band, respectively. Further, their luminescence mechanisms will be discussed.

中文翻译：

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Zn掺杂对Ga2O3低维纳米结构形貌和发光的影响

摘要 采用热蒸发法合成了Zn掺杂的Ga2O3纳米结构。SEM 结果表明样品中含有大量纳米棒。样品的 EDS 分析表明纳米结构主要由 Ga 和 O 元素组成，也观察到少量的 Zn 元素。拉曼光谱表明样品仍保持与纯 Ga2O3 晶体结构一致的单斜结构。在室温下观察到以 2.3 eV 为中心的宽带蓝绿色发光。Zn掺杂的Ga2O3纳米结构的PL光谱的发光强度随着Zn掺杂量的变化而变化。此外，与纯 Ga2O3 纳米结构相比，Zn 掺杂的 Ga2O3 纳米结构的 PL 光谱具有红移。对Ga2O3粉与锌粉质量比为10:1的Zn掺杂Ga2O3纳米结构的PL光谱分析表明，Zn掺杂Ga2O3纳米结构的宽带蓝绿色发光由一种蓝色发光（ 2.8 eV, 450 nm) 波段、1 个绿色发光 (2.3 eV, 533 nm) 波段、1 个黄色发光 (2.1 eV, 592 nm) 波段和 1 个红色发光 (1.9 eV, 638 nm) 波段。此外，将讨论它们的发光机制。