A solution-processed near-infrared (NIR) photodetector based on a mixture of PbS colloidal quantum dots (CQDs) and Poly(3-hexylthiophene) (P3HT) was presented. In a reverse field-effect transistor (FET) device configuration Au(S,D)/P3HT:PbS/PMMA/Al(G), uniform-sized and well-dispersed PbS CQDs were employed as NIR absorbing materials in the active layer. Meanwhile, the poly(methyl methacrylate) (PMMA) dielectric layer could be seen as an encapsulation to enhance the device stability. Herein, high “on/off” current ratio ( $I_{on}/I_{off})$ of 10⁴ was obtained in dark, and the maximum photosensitivity ( $P$ ) of 947 was gotten under 200 mW/cm² 980 nm illumination. When the irradiance reduced to 0.1 mW/cm², the responsivity ( $R$ ) and detectivity ( $D^{\ast }$ ) of the NIR photodetector reached 9.4 mA/W and $2.5\times 10^{11}$ Jones, respectively. Therefore, the P3HT:PbS hybrid FET-based NIR photodetector had shown both relatively high electrical and detecting performance, which provided an experimental foundation and method for the next fabrication of medical infrared detectors and sensors.

中文翻译：

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解决方案处理的 P3HT：具有 FET 配置的基于 PbS 的 NIR 光电探测器

提出了一种基于 PbS 胶体量子点 (CQD) 和聚 (3-己基噻吩) (P3HT) 混合物的溶液处理近红外 (NIR) 光电探测器。在反向场效应晶体管 (FET) 器件配置 Au(S,D)/P3HT:PbS/PMMA/Al(G) 中，均匀尺寸且分散良好的 PbS CQD 被用作有源层中的 NIR 吸收材料。同时，聚（甲基丙烯酸甲酯）（PMMA）介电层可被视为增强器件稳定性的封装。这里，高“开/关”电流比（ $I_{on}/I_{off})$ 在黑暗中获得10 ⁴的最大光敏度（ $P$ ) 947 在 200 mW/cm ² 980 nm 光照下得到。当辐照度降低到 0.1 mW/cm ^{2 时}，响应度 ( $R$ ) 和探测能力 ( $D^{\ast }$ ) 的 NIR 光电探测器达到 9.4 mA/W 和 $2.5\乘以 10^{11}$ 琼斯分别。因此，基于 P3HT:PbS 混合 FET 的 NIR 光电探测器表现出较高的电学和探测性能，为下一步制造医用红外探测器和传感器提供了实验基础和方法。