The relationship between the crystallization process and opto-electronic properties of silicon quantum dots (Si QDs) synthesized by atmospheric pressure plasmas (APPs) is studied in this work. The synthesis of Si QDs is carried out by flowing silane as a gas precursor in a plasma confined to a submillimeter space. Experimental conditions are adjusted to propitiate the crystallization of the Si QDs and produce QDs with both amorphous and crystalline character. In all cases, the Si QDs present a well-defined mean particle size in the range of 1.5–5.5 nm. Si QDs present optical bandgaps between 2.3 eV and 2.5 eV, which are affected by quantum confinement. Plasma parameters evaluated using optical emission spectroscopy are then used as inputs for a collisional plasma model, whose calculations yield the surface temperature of the Si QDs within the plasma, justifying the crystallization behavior under certain experimental conditions. We measure the ultraviolet-visible optical properties and electronic properties through various techniques, build an energy level diagram for the valence electrons region as a function of the crystallinity of the QDs, and finally discuss the integration of these as active layers of all-inorganic solar cells.

中文翻译：

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将能带桥接到Si QD的结晶态和非晶态。

本文研究了大气压等离子体（APPs）合成的硅量子点（Si QDs）的结晶过程与光电性能之间的关系。Si QD的合成是通过使作为气体前体的硅烷在受限于亚毫米空间的等离子体中流动来进行的。调整实验条件以促进Si QD的结晶并产生具有非晶和晶体特性的QD。在所有情况下，Si QD的平均粒径均在1.5-5.5 nm范围内。Si QD的光学带隙介于2.3 eV和2.5 eV之间，受量子限制的影响。然后，将使用光发射光谱法评估的等离子体参数用作碰撞等离子体模型的输入，其计算得出等离子体内Si QD的表面温度，证明在某些实验条件下的结晶行为是合理的。我们通过各种技术测量紫外可见光的光学性质和电子性质，建立价电子区域的能级图，作为量子点的结晶度的函数，最后讨论将它们整合为全无机太阳能的活性层细胞。