Abstract

Silicon nanowires (SiNWs) are fabricated by Ag assisted chemical etching and are treated with hydrogen plasma created by electron cyclotron resonance (ECR) plasma system at 600 watts microwave power for various time durations (0–30 min). The hydrogen plasma exposure on the surface of the SiNWs reduced the surface roughness and increased the crystalline nature. SEM analysis revealed that the diameter of the SiNWs decreased on plasma exposure. The electrical conduction measurements suggested that the hydrogen plasma exposure for 5 min on the SiNW surface enhanced the electrical conductivity when compared to as fabricated SiNW surface. The hydrophobic nature of fabricated SiNWs was transformed to hydrophilic at plasma exposure for lower time duration. On plasma exposure of NWs for 30 min the sample turned hydrophobic. Study of different properties of the SiNWs before and after plasma treatment revealed that there is pronounced effect of plasma on the nature of SiNWs.

中文翻译：

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表面修饰对银辅助ECR氢等离子体化学蚀刻法生长的硅纳米线性能的影响

摘要

硅纳米线（SiNWs）是通过Ag辅助化学刻蚀制造的，并通过电子回旋共振（ECR）等离子体系统在600瓦微波功率下产生的氢等离子体在不同的持续时间（0-30分钟）内进行处理。SiNWs表面的氢等离子体暴露降低了表面粗糙度并增加了晶体性质。SEM分析表明，SiNWs的直径在等离子体暴露时减小。电导率测量表明，与制造的SiNW表面相比，在SiNW表面暴露5分钟的氢等离子体可提高电导率。人造SiNWs的疏水性在等离子暴露下转化为亲水性的时间更长。在NW的血浆中暴露30分钟后，样品变为疏水性。