Novel blue-emitting KBaGdSi₂O₇:Eu²⁺ phosphors were designed and synthesized through solid-state reaction method. The structural properties, concentration, and temperature-dependent luminescence behaviors of these phosphors were investigated in detail in this paper. Studies revealed that KBaGdSi₂O₇:Eu²⁺ phosphors have an intense absorption in the broad wavelength ranging from 250 to 400 nm that is suitable for the commercial near-UV LED, and give out intense blue light peaked at 475 nm with a full-width half-maximum of 75 nm. The crystallographic information of KBaGdSi₂O₇ phase is revealed from XRD pattern by Rietveld refinement. Band gap is derived to be 3.93 eV through diffuse reflection spectra through Kubelka Munk function. The concentration quenching mechanism is identified as the dipole–dipole interaction. Moreover, the thermal quenching experiment was also conducted and the activation energy is calculated as 0.3069 eV, which indicates this novel KBaGdSi₂O₇:Eu²⁺ phosphor has good thermal stability. These properties exhibit its potential commercial application for near-UV white-light LEDs (w-LEDs).

中文翻译：

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用于近紫外白光LED的新型发射蓝光的KBaGdSi 2 O 7：Eu 2+荧光粉

通过固相反应法设计合成了新型的发蓝光KBaGdSi ₂ O ₇：Eu ²⁺荧光粉。本文详细研究了这些荧光粉的结构特性，浓度和与温度有关的发光行为。研究表明，KBaGdSi ₂ O ₇：Eu ²⁺荧光粉在250至400 nm的宽波长范围内具有很强的吸收能力，适用于商用近紫外LED，并发出峰值为475 nm的强烈蓝光，并充满-最大半峰宽为75 nm。KBaGdSi ₂ O ₇的晶体学信息Rietveld精修从XRD图案揭示了相。通过Kubelka Munk函数的漫反射光谱可将带隙推导出为3.93 eV。浓度猝灭机理被认为是偶极-偶极相互作用。此外，还进行了热淬火实验，计算出的活化能为0.3069 eV，表明该新型KBaGdSi ₂ O ₇：Eu ²⁺荧光粉具有良好的热稳定性。这些特性展示了其在近紫外白光LED（w-LED）方面的潜在商业应用。