Abstract In this work, several X-ray and nuclear analysis techniques were used to examine ZnO materials co-doped with In and Ga, or IGZO materials. X-ray diffraction analysis, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy revealed multi-scale defects in the materials. A nanoscale secondary Ga2Zn9O12 spinel phase, mesoscale grain boundaries, and atomic-scale lattice defects were detected. The lattice defects included oxygen vacancies, zinc vacancies, and complex defects. Positron annihilation spectroscopy and Doppler broadening spectroscopy provided evidence of interactions between charge carriers and defects sites, which explained the low thermal conductivities of the IGZO materials (κtotal ≈ 3.9 W/mK) at 773 K. This combination of X-ray and nuclear analytical techniques can be viewed as a novel approach for investigating the thermoelectric properties of materials with complex crystal structures that contain atomic-scale voids, nanoscale secondary phases, and mesoscale grain boundaries.

中文翻译：

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In和Ga共掺杂ZnO热电陶瓷材料中的多尺度缺陷

摘要 在这项工作中，使用多种 X 射线和核分析技术来检查与 In 和 Ga 共掺杂的 ZnO 材料或 IGZO 材料。X 射线衍射分析、能量色散 X 射线光谱和 X 射线光电子能谱揭示了材料中的多尺度缺陷。检测到纳米级次生 Ga2Zn9O12 尖晶石相、中尺度晶界和原子级晶格缺陷。晶格缺陷包括氧空位、锌空位和复合缺陷。正电子湮没光谱和多普勒展宽光谱提供了电荷载流子和缺陷位点之间相互作用的证据，这解释了 IGZO 材料在 773 K 时的低热导率（κtotal ≈ 3.9 W/mK）。