Abstract Cu-based chemical vapor deposition method can produce large-area graphene films, usually polycrystalline films with grain boundaries as the main defects. One way to reduce grain boundaries is to grow oriented graphene domains (OGDs), which can ultimately perfectly integrate. In contrast to previously reported methods of limiting OGD growth on Cu (1 1 1), we find that OGDs can grow on Cu substrates with a large surface crystallographic structure tolerance. Density functional theory calculations show that this is due to the single lowest energy state of graphene nucleation. The growth temperature is crucial. It must be high enough (1045 °C) to suppress mis-OGD nucleation, but not too high (1055 °C) to deteriorate OGD growth. Mis-OGD nucleation can also be caused by C impurity in Cu grains, which can be depleted by thermal pretreatment of the substrate in an oxidizing atmosphere. On the other hand, OGD growth is not sensitive to the atmosphere at growth stage within the range that we have tested.

中文翻译：

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Cu衬底上定向石墨烯畴的表面晶体结构不敏感生长

摘要 Cu基化学气相沉积法可以制备大面积的石墨烯薄膜，通常以晶界为主要缺陷的多晶薄膜。减少晶界的一种方法是生长定向石墨烯域 (OGD)，最终可以完美集成。与先前报道的限制 OGD 在 Cu (1 1 1) 上生长的方法相比，我们发现 OGD 可以在具有大表面晶体结构公差的 Cu 衬底上生长。密度泛函理论计算表明，这是由于石墨烯成核的单一最低能量状态。生长温度至关重要。它必须足够高 (1045 °C) 以抑制错误的 OGD 成核，但不能太高 (1055 °C) 以破坏 OGD 的生长。Mis-OGD成核也可由Cu晶粒中的C杂质引起，可以通过在氧化气氛中对基材进行热预处理来消耗。另一方面，在我们测试的范围内，OGD 生长对生长阶段的大气不敏感。