Multi‐functional controllable devices exhibit excellent one‐selector one‐resistor (1S1R) and threshold switching properties, which are valuable for the development of integration. In article number 1900756, Guokun Ma, Li Tao, Hao Wang, and co‐workers discuss this multi‐function and use finite element analysis to solidly understand the mechanism behind it. This work will allow for better understanding of the degeneration of 1S1R properties and represents a step towards 3D storage technology.

中文翻译：

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一选单阻设备：基于单个氧化铌层的3D集成应用的多功能可控存储设备（Adv。Electron。Mater。1/2020）

多功能可控设备具有出色的单选单电阻（1S1R）和阈值切换特性，这对于集成开发非常有价值。在编号1900756中，马国坤，李涛，王浩和同事们讨论了此多功能功能，并使用有限元分析来扎实地了解其背后的机理。这项工作将使人们更好地理解1S1R属性的退化，并朝着3D存储技术迈出了一步。