Multilayer indium selenide (InSe) is a good candidate for high performance electronic and optoelectronic devices. The electrical performance of InSe is effectively regulated by dielectric layers, contact electrodes and surface doping. However, as a powerful tool to tune properties of materials, alloy engineering is absent for multilayer InSe. In this letter, for the first time, we investigate the electrical property of InSe1-xTex alloys and optoelectronic property of InSe-InSe0.82Te0.18p-n heterojunction. The electrical transport properties of InSe1-xTex alloys strongly depend on the content of Te composition. With the ratio of Te/Se increasing, the n-type electron transport behavior of InSe gradually transfers to the p-type hole transport behavior of InSe0.82Te0.18. The p-n InSe-InSe0.82Te0.18 heterojunction shows a rectification effect and a self-powered photodetection. The self-powered photodetector (SPPD) has a broad photodetection range from visible light (400 nm) to near-infrared (NIR) light (1000 nm). The responsivity (R) of SPPD is 14.1 mA/W under illuminated by NIR light (900 nm) at zero bias, which is comparable to some of the 2D heterojunctions NIR photodetectors measured with an external bias. The SPPD also shows a stable and fast response to NIR light (900 nm). This work demonstrates that the electrical transport properties of InSe1-xTex alloys significantly rely on the ratio of Te/Se and suggests that InSe-InSe1-xTex p-n heterojunction has a excellent potential for application in the self-powered optoelectronic device.

中文翻译：

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合金工程用于高性能自供电光电探测器的多层InSe可调电子性能。

多层硒化铟（InSe）是高性能电子和光电设备的理想选择。InSe的电性能可通过介电层，接触电极和表面掺杂有效地调节。但是，作为调节材料性能的强大工具，多层InSe缺少合金工程。在这封信中，我们首次研究了InSe1-xTex合金的电性能和InSe-InSe0.82Te0.18p-n异质结的光电性能。InSe1-xTex合金的电传输性能在很大程度上取决于Te成分的含量。随着Te / Se比值的增加，InSe的n型电子输运行为逐渐转变为InSe0.82Te0.18的p型空穴输运行为。pn InSe-InSe0.82Te0。图18的异质结显示了整流效应和自供电的光电检测。自供电光电探测器（SPPD）的光电探测范围很广，从可见光（400 nm）到近红外（NIR）光（1000 nm）。SPPD的响应度（R）在零偏压下被NIR光（900 nm）照射时为14.1 mA / W，这与某些使用外部偏压测量的2D异质结NIR光电探测器相当。SPPD还显示出对NIR光（900 nm）的稳定和快速响应。这项工作表明InSe1-xTex合金的电输运性能显着依赖于Te / Se的比率，并表明InSe-InSe1-xTex pn异质结在自供电光电子器件中具有极好的应用潜力。自供电光电探测器（SPPD）的光电探测范围很广，从可见光（400 nm）到近红外（NIR）光（1000 nm）。SPPD的响应度（R）在零偏压下被NIR光（900 nm）照射下为14.1 mA / W，这与某些使用外部偏压测量的2D异质结NIR光电探测器相当。SPPD还显示出对NIR光（900 nm）的稳定和快速响应。这项工作表明InSe1-xTex合金的电输运性能显着依赖于Te / Se的比率，并表明InSe-InSe1-xTex pn异质结在自供电光电器件中具有极好的应用潜力。自供电光电探测器（SPPD）的光电探测范围很广，从可见光（400 nm）到近红外（NIR）光（1000 nm）。SPPD的响应度（R）在零偏压下被NIR光（900 nm）照射时为14.1 mA / W，这与某些使用外部偏压测量的2D异质结NIR光电探测器相当。SPPD还显示出对NIR光（900 nm）的稳定和快速响应。这项工作表明InSe1-xTex合金的电输运性能显着依赖于Te / Se的比率，并表明InSe-InSe1-xTex pn异质结在自供电光电子器件中具有极好的应用潜力。与使用外部偏置测量的某些2D异质结NIR光电探测器相当。SPPD还显示出对NIR光（900 nm）的稳定和快速响应。这项工作表明InSe1-xTex合金的电输运性能显着依赖于Te / Se的比率，并表明InSe-InSe1-xTex pn异质结在自供电光电子器件中具有极好的应用潜力。与使用外部偏置测量的某些2D异质结NIR光电探测器相当。SPPD还显示出对NIR光（900 nm）的稳定和快速响应。这项工作表明InSe1-xTex合金的电输运性能显着依赖于Te / Se的比率，并表明InSe-InSe1-xTex pn异质结在自供电光电子器件中具有极好的应用潜力。