当前位置: X-MOL 学术IEEE Microw. Wirel. Compon. Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Research on Linearity Improvement of Silicon-Based p-i-n Diode Limiters
IEEE Microwave and Wireless Components Letters ( IF 3 ) Pub Date : 2020-01-01 , DOI: 10.1109/lmwc.2019.2957216
Shixiong Deng , Changzheng Gao , Shubin Chen , Jiyong Sun , Kang Wu

The threshold is a key indicator of linearity for limiters. However, the threshold of silicon-based p-i-n diode limiters drops rapidly at low frequencies. This letter presents a novel method to improve the threshold of limiters for protecting analog-to-digital converters. A silicon-based p-i-n diode and a zener diode were stacked as a thicker p-i-n diode. Three 30–300-MHz limiters using the same p-i-n diode and different zener diodes were designed. Both the simulated and measured results are presented to verify this method. The results show that the thresholds were improved by 12, 19, and 21 dB, respectively.

中文翻译:

硅基pin二极管限幅器线性度改善研究

阈值是限制器线性度的关键指标。然而,硅基pin二极管限幅器的阈值在低频时迅速下降。这封信提出了一种提高限制器阈值以保护模数转换器的新方法。硅基pin二极管和齐纳二极管堆叠为更厚的pin二极管。设计了三个使用相同 pin 二极管和不同齐纳二极管的 30–300 MHz 限幅器。提供了模拟和测量结果以验证该方法。结果表明,阈值分别提高了 12、19 和 21 dB。
更新日期:2020-01-01
down
wechat
bug