Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without applied bias, which have applications ranging from RF power detection to terahertz imaging systems. In this letter, we present gated nanowire field-effect rectifiers (NW-FERs) fabricated with a process compatible with other RF devices on a standard AlGaN-GaN high electron mobility transistor (HEMT) platform as a new potential RF zero-bias diode. Signal rectification relies on the electrostatic modulation of the gated-NW carrier concentration, which is optimized by a judicious NW width design. NW-FERs presented a large curvature (30.1 V−1), close to the theoretical limit (38.7 V−1) for ideal Schottky diodes, and an excellent tradeoff between a flat frequency response, up to a few tens of gigahertz, and a large responsivity (3000 V/W). The compatible fabrication process and the very good results provide a promising high-performance zero-bias diode architecture that could be integrated on AlGaN/GaN microwave monolithic integrated circuits (MMICs).

中文翻译：

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基于 AlGaN/GaN 纳米线的宽带零偏置射频场效应整流器

微波零偏置整流器是能够在不施加偏置的情况下对 RF 信号进行整流的快速设备，其应用范围从 RF 功率检测到太赫兹成像系统。在这封信中，我们介绍了在标准 AlGaN-GaN 高电子迁移率晶体管 (HEMT) 平台上采用与其他射频器件兼容的工艺制造的门控纳米线场效应整流器 (NW-FER)，作为一种新的潜在射频零偏置二极管。信号整流依赖于门控 NW 载流子浓度的静电调制，这是通过明智的 NW 宽度设计进行优化的。NW-FER 具有大曲率 (30.1 V-1)，接近理想肖特基二极管的理论极限 (38.7 V-1)，并且在高达几十 GHz 的平坦频率响应和大响应度 (3000 V/W)。