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Monolithic Integrated Antenna and Schottky Diode Multiplier for Free Space Millimeter-Wave Power Generation
IEEE Microwave and Wireless Components Letters ( IF 2.374 ) Pub Date : 2019-12-09 , DOI: 10.1109/lmwc.2019.2954208
Alina C. Bunea; Dan Neculoiu; Antonis Stavrinidis; George Stavrinidis; Athanasios Kostopoulos; Zacharias Chatzopoulos; George Konstantinidis

This letter presents a novel monolithic integrated frequency multiplier circuit for free space power generation in the ${W}$ -band (75–110 GHz). The circuit is based on a submicrometer GaAs Schottky diode monolithically integrated with a slot antenna on a GaAs semi-insulating substrate. The fabricated diode with an air-bridged Schottky contact and a U-shaped ohmic contact showed an ideality factor of about 1.25 and a zero bias cutoff frequency higher than 1.25 THz. Using input signals between 15 and 50 GHz, the free space power generated in the ${W}$ -band corresponding to $\times 2$ , $\times 3$ , $\times 4$ , and $\times 5$ frequency multiplication was measured and showed minimum isotropic conversion losses (with antenna) of 11.5, 16.9, 23.7, and 26.4 dB, respectively.
更新日期:2020-01-10

 

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