当前位置: X-MOL 学术Phys. Rep. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Variable-range hopping charge transport in organic thin-film transistors
Physics Reports ( IF 30.0 ) Pub Date : 2020-02-01 , DOI: 10.1016/j.physrep.2019.12.002
O. Marinov , M.J. Deen , J.A. Jiménez-Tejada , C.H. Chen

Abstract The charge transport in organic thin-film transistors (OTFTs) is assessed in terms of variable range hopping (VRH), by numerical simulations, analytical analyses and comparisons to published experimental results. A numerical simulator, built on the fundamental relations for VRH, provides a simple key dependence that the sum of hopping energy and energy bending under bias is equal to the hopping energy in the bulk material, the latter a bias-independent function of the absolute temperature. This relation binds electrostatics and VRH in OTFTs, at various assumptions for density of states (exponential, double-exponential and normal distributions). It generates and confirms many analytical expressions accumulated over the years for mobility, conductance, potential profiles in the depth of the organic semiconducting film and their relation to bias, film-thickness, also explaining the performance of OTFTs at elevated temperatures. The relations between charges, mobility and bias in OTFTs adhere from the above key dependence. We provide a method to obtain the distribution of the hopping time, which establishes explanations to non-stationary effects in OTFTs, such as dispersive transport, non-reciprocal transitions between on and off-states of the OTFT (usually attributed to gate bias stress and charge build-up), and low-frequency noise in the OTFT channel current.

中文翻译:

有机薄膜晶体管中的可变范围跳跃电荷传输

摘要 有机薄膜晶体管 (OTFT) 中的电荷传输通过数值模拟、分析分析和与已发表实验结果的比较,根据可变范围跳跃 (VRH) 进行评估。基于 VRH 基本关系的数值模拟器提供了一个简单的关键依赖关系,即跳跃能量和偏置下的能量弯曲之和等于散装材料中的跳跃能量,后者是绝对温度的偏置无关函数. 在对状态密度(指数、双指数和正态分布)的各种假设下,这种关系将 OTFT 中的静电和 VRH 绑定在一起。它生成并确认了多年来积累的许多关于迁移率、电导、有机半导体薄膜深度的电位分布及其与偏置、薄膜厚度的关系,也解释了 OTFT 在高温下的性能。OTFT 中的电荷、迁移率和偏置之间的关系遵循上述关键依赖关系。我们提供了一种获得跳跃时间分布的方法,该方法解释了 OTFT 中的非平稳效应,例如色散传输、OTFT 开和关状态之间的非互易转变(通常归因于栅极偏置应力和电荷积累)和 OTFT 通道电流中的低频噪声。
更新日期:2020-02-01
down
wechat
bug