SnS is widely noticed in optoelectronics and thermoelectric fields. But the low-electrical transmission performance confines its actual application. In this paper, Ag-doped SnS thin films were successfully prepared by a sample electrodeposition method. The mechanism of the S and Sn co-deposition and the effect of complexing agent K₄P₂O₇ were studied. The Ag content was successfully controlled by the adjustment of the electrolyte and deposition parameters. The b-axis texture was strengthened by Cetyl trimethyl ammonium bromide (CTAB) in the electrolyte. The carrier concentration was promoted by the control of Ag content and the carrier mobility was promoted by the strengthening of the b-axis texture. The electrical conductivity was promoted by the combination of the Ag concentration control and b-axis texture control. It reached the highest known value of 1.40 S cm⁻¹ under the highest b-axis texture coefficient. Such a sample combination method and control strategies provide a new view for the preparation of semiconductors with high-electrical transmission properties.

中文翻译：

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具有高电传输特性的掺Ag SnS薄膜的电沉积和质构控制

SnS在光电子和热电领域广为关注。但是低电传输性能限制了其实际应用。本文通过样品电沉积方法成功制备了掺Ag的SnS薄膜。研究了S和Sn共沉积的机理以及络合剂K ₄ P ₂ O ₇的作用。通过调节电解质和沉积参数成功地控制了Ag含量。在b轴质地是由十六烷基三甲基溴化铵（CTAB）在电解质加强。通过控制Ag含量可以提高载流子浓度，通过提高b的含量可以提高载流子迁移率。轴纹理。通过Ag浓度控制和b轴织构控制的组合来提高电导率。在最高的b轴纹理系数下，它达到了1.40 S cm ^-1的最高已知值。这种样品组合方法和控制策略为制备具有高电传输特性的半导体提供了新的视角。