Abstract Electrodeposition is widely used to deposit films in technological applications, but when the current efficiency is low, injected hydrogen can strongly affect the materials properties of an underlying film including its residual stress, adhesion and electrical resistivity. It is of interest to quantify this issue and demonstrate processing routes that retain good quality films. In this work, we explore the effects of electrodeposited nanocrystalline Ni-W on to a Ta thin film. This system serves as challenging test case because the current efficiency is only 31%. We observe that H incorporation induces GPa-level compressive stress in an underlying Ta film. The stress initiates a buckling-induced delamination failure of within 2 s, even though at 1.5 µm the Ta is relatively thick. Delamination over the entire film area occurs within 5 s. We demonstrate two process routes by which Ta films remain adhered when Ni-W is electrodeposited for 100 s, corresponding to a 1 µm thick Ni-W film.

中文翻译：

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电沉积引起薄膜分层的原因及克服它的加工方法

摘要 电沉积在技术应用中被广泛用于沉积薄膜，但当电流效率较低时，注入的氢气会强烈影响底层薄膜的材料特性，包括其残余应力、附着力和电阻率。量化这个问题并展示保留优质薄膜的加工路线很有趣。在这项工作中，我们探索了电沉积纳米晶 Ni-W 对 Ta 薄膜的影响。该系统作为具有挑战性的测试用例，因为当前的效率仅为 31%。我们观察到 H 掺入在下面的 Ta 膜中引起 GPa 级压缩应力。应力会在 2 秒内引发屈曲诱导的分层失效，即使在 1.5 µm 时 Ta 相对较厚。整个薄膜区域的分层发生在 5 秒内。