Abstract Several schemes for the electrical pumping of dielectric loaded surface plasmon polariton waveguides are analysed. Two schemes that are designed to move the electrical contact away from the plasmon mode are compared to a Schottky contact scheme which has the electrical contact at the same metal/semiconductor interface which supports the surface plasmon mode. One scheme involves transporting carriers from lateral contacts via a thin semiconductor pathway. The other scheme involves burying the electrical contact inside the metal surface and having the surface plasmon mode skip over the break in the metal/semiconductor interface. The Schottky contact scheme is shown to have the best confinement of the surface plasmon mode on the gain medium. However, the other two alternative schemes can be engineered to require significantly less gain to overcome metal losses. Current densities required in the non Schottky contact schemes are found to be compatible with current semiconductor laser electrical contacts.

中文翻译：

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电泵浦介电负载表面等离子体波导

摘要 分析了几种加载介质的表面等离子体激元波导的电泵浦方案。将设计用于将电接触从等离子体模式移开的两种方案与肖特基接触方案进行比较，肖特基接触方案在支持表面等离子体模式的相同金属/半导体界面处具有电接触。一种方案涉及通过薄半导体通路从横向接触传输载流子。另一种方案涉及将电接触埋在金属表面内，并使表面等离子体模式跳过金属/半导体界面中的断裂。肖特基接触方案显示出对增益介质上的表面等离子体模式的最佳限制。然而，其他两种替代方案可以设计成需要显着减少的增益来克服金属损失。发现非肖特基接触方案中所需的电流密度与当前的半导体激光器电接触兼容。