The implantation of aluminum into 4H-SiC is studied using secondary ion mass spectrometry. In particular, two-dimensional concentration profiles are obtained, which allow the investigation of lateral straggling and its dependence on the crystallographic orientation. A high dose, medium energy aluminum implantation is studied in great detail. It shows an asymmetric distribution due to the 4 °-off axis growth of the epitaxial layer. The lateral straggling is found to be in the range of several micrometers for a concentration of 1 × 10 15 cm − 3, which is contrary to the expectation given by most simulation studies. Implantations performed at different orientations support the idea that lateral straggling highly depends on the particular channeling opening.The implantation of aluminum into 4H-SiC is studied using secondary ion mass spectrometry. In particular, two-dimensional concentration profiles are obtained, which allow the investigation of lateral straggling and its dependence on the crystallographic orientation. A high dose, medium energy aluminum implantation is studied in great detail. It shows an asymmetric distribution due to the 4 °-off axis growth of the epitaxial layer. The lateral straggling is found to be in the range of several micrometers for a concentration of 1 × 10 15 cm − 3, which is contrary to the expectation given by most simulation studies. Implantations performed at different orientations support the idea that lateral straggling highly depends on the particular channeling opening.

中文翻译：

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4H-SiC中注入铝的横向散乱

使用二次离子质谱法研究了将铝注入 4H-SiC。特别是，获得了二维浓度分布，这允许研究横向散乱及其对晶体取向的依赖性。对高剂量、中等能量的铝注入进行了非常详细的研究。由于外延层的 4° 离轴生长，它显示出不对称分布。对于 1 × 10 15 cm - 3 的浓度，横向散乱被发现在几微米的范围内，这与大多数模拟研究给出的预期相反。在不同方向进行的注入支持横向分散高度依赖于特定通道开口的想法。使用二次离子质谱法研究了铝注入 4H-SiC。特别是，获得了二维浓度分布，这允许研究横向散乱及其对晶体取向的依赖性。对高剂量、中等能量的铝注入进行了非常详细的研究。由于外延层的 4° 离轴生长，它显示出不对称分布。对于 1 × 10 15 cm - 3 的浓度，横向散乱被发现在几微米的范围内，这与大多数模拟研究给出的预期相反。在不同方向进行的植入支持横向分散高度依赖于特定通道开口的想法。对中能铝注入进行了非常详细的研究。由于外延层的 4° 离轴生长，它显示出不对称分布。对于 1 × 10 15 cm - 3 的浓度，横向散乱被发现在几微米的范围内，这与大多数模拟研究给出的预期相反。在不同方向进行的植入支持横向分散高度依赖于特定通道开口的想法。对中能铝注入进行了非常详细的研究。由于外延层的 4° 离轴生长，它显示出不对称分布。对于 1 × 10 15 cm - 3 的浓度，横向散乱被发现在几微米的范围内，这与大多数模拟研究给出的预期相反。在不同方向进行的植入支持横向分散高度依赖于特定通道开口的想法。