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Artificial synaptic transistor with solution processed InOx channel and AlOx solid electrolyte gate
Applied Physics Letters ( IF 4 ) Pub Date : 2020-01-06 , DOI: 10.1063/1.5120069
Xiaoci Liang 1 , Zhenwen Li 1 , Ling Liu 1 , Shujian Chen 1 , Xinzhong Wang 2 , Yanli Pei 1, 2
Affiliation  

In this Letter, three-terminal transistor-based artificial synapses are proposed that are simply constructed with a solution-processed InOx channel and AlOx electrolyte gate. Paired pulse facilitation and short-term potentiation (STP) are realized and modulated by adjusting the amplitude, duration, and interval time of the spiking pulses. Furthermore, the STP is transferred to long-term potentiation (LTP) by increasing the pulse amplitude and number. In addition, spike-timing-dependent plasticity is demonstrated. The high density hydrogen in low temperature processed AlOx is adsorbed on InOx electrostatically or electrochemically, which plays a role in synaptic behaviors. This study provides useful information to understand neuromorphic devices based on solution processed oxide dielectrics and oxide semiconductors.

中文翻译:

具有溶液处理的 InOx 通道和 AlOx 固体电解质门的人工突触晶体管

在这封信中,提出了基于三端晶体管的人工突触,该突触由溶液处理的 InOx 通道和 AlOx 电解质门简单构建。通过调整尖峰脉冲的幅度、持续时间和间隔时间来实现和调制成对脉冲促进和短期增强 (STP)。此外,通过增加脉冲幅度和数量,STP 被转换为长时程增强 (LTP)。此外,还证明了与尖峰时间相关的可塑性。低温处理的 AlOx 中的高密度氢以静电或电化学方式吸附在 InOx 上,这在突触行为中起作用。这项研究为了解基于溶液处理的氧化物电介质和氧化物半导体的神经形态器件提供了有用的信息。
更新日期:2020-01-06
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