Hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on a polycrystalline diamond substrate. The device has a gate length of 2 μm and uses Al2O3 grown by atomic layer deposition at 300 °C as a gate dielectric and passivation layer. The Al2O3/H-diamond interfacial band configuration was investigated by X-ray photoelectron spectroscopy, and a large valence band offset (3.28 eV) that is very suitable for p-channel H-diamond FETs was observed. Meanwhile, the measured O/Al ratio hints that there are Oi or VAl defects in the Al2O3 dielectric, which can work as an acceptorlike transfer doping material on a H-diamond surface. The device delivers the maximum saturation drain current of over 200 mA/mm, which is the highest for 2-μm H-diamond MOSFETs with the gate dielectric or passivation layer grown at 300 °C or higher temperature. The ultrahigh on/off ratio of 1010 and ultralow gate leakage current of below 10−12 A have been achieved. The high device performance is ascribed to the ultrahigh carrier density, good interface characteristics, and device processes. In addition, the transient drain current response of the device can follow the gate voltage switching on/off pulse at a frequency from 100 kHz to 1 MHz, which indicates the potential of the H-diamond FETs in power switch applications.

中文翻译：

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高温 (300 °C) ALD 在氢端金刚石上生长的 Al2O3：MOSFET 的带偏移和电气特性

在多晶金刚石基板上制造氢端基金刚石（H-金刚石）金属氧化物半导体场效应晶体管（MOSFET）。该器件的栅极长度为 2 μm，使用在 300 °C 下通过原子层沉积生长的 Al2O3 作为栅极介电层和钝化层。通过 X 射线光电子能谱研究了 Al2O3/H-金刚石界面带构型，观察到非常适合 p 沟道 H-金刚石 FET 的大价带偏移 (3.28 eV)。同时，测得的 O/Al 比表明 Al2O3 电介质中存在 Oi 或 VAl 缺陷，可以作为 H 金刚石表面上的类受体转移掺杂材料。该器件提供超过 200 mA/mm 的最大饱和漏极电流，这是栅极电介质或钝化层在 300°C 或更高温度下生长的 2-μm H 金刚石 MOSFET 的最高值。已实现 1010 的超高开/关比和低于 10-12 A 的超低栅极漏电流。高器件性能归因于超高载流子密度、良好的界面特性和器件工艺。此外，该器件的瞬态漏极电流响应可以跟随栅极电压在 100 kHz 至 1 MHz 频率下的开/关脉冲，这表明 H 金刚石 FET 在功率开关应用中的潜力。和设备进程。此外，该器件的瞬态漏极电流响应可以跟随栅极电压在 100 kHz 至 1 MHz 频率下的开/关脉冲，这表明 H 金刚石 FET 在功率开关应用中的潜力。和设备进程。此外，该器件的瞬态漏极电流响应可以跟随栅极电压在 100 kHz 至 1 MHz 频率下的开/关脉冲，这表明 H 金刚石 FET 在功率开关应用中的潜力。