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Physical Vapor Deposition of Zinc Phthalocyanine Nanostructures on Oxidized Silicon and Graphene Substrates
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2020-03-01 , DOI: 10.1016/j.jcrysgro.2020.125484
T. Mirabito , B. Huet , A.L. Briseno , D.W. Snyder

Abstract Conventional evaporation techniques for zinc phthalocyanine (ZnPc) processing have been a preferred method for the fabrication of nanostructured films. We present a new growth methodology with independent and precise control of the growth flux and substrate temperature. This provides a consistent and well controlled growth, critical for the growth mechanism studies. ZnPc nanostructures are synthesized on single layer graphene coated silicon substrates, under a wide range of growth conditions, using this new approach. The structural features of ZnPc were investigated using Scanning Electron Microscope (SEM) and compared against previous studies of metal-phthalocyanine interactions with graphitic substrates. The observations over a wide range of evaporation conditions and substrate temperatures illustrate the ability to control film structure.

中文翻译:

氧化硅和石墨烯衬底上锌酞菁纳米结构的物理气相沉积

摘要 用于锌酞菁 (ZnPc) 处理的常规蒸发技术已成为制造纳米结构薄膜的首选方法。我们提出了一种新的生长方法,可以独立且精确地控制生长通量和基板温度。这提供了一致且控制良好的生长,这对于生长机制研究至关重要。使用这种新方法,在广泛的生长条件下,在单层石墨烯涂覆的硅衬底上合成 ZnPc 纳米结构。使用扫描电子显微镜 (SEM) 研究了 ZnPc 的结构特征,并与之前对金属-酞菁与石墨基材相互作用的研究进行了比较。
更新日期:2020-03-01
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