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Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film
Journal of Materials Science & Technology ( IF 10.9 ) Pub Date : 2020-01-08 , DOI: 10.1016/j.jmst.2019.10.033
C.H. Yan , F. Wei , Y. Bai , F. Wang , A.Q. Zhang , S. Ma , W. Liu , Z.D. Zhang

Topological crystalline insulator (TCI) as a new type of topological materials has attracted extensive research interests for its tunable topological properties. Due its symmetry topological protection essence, the structure investigation provides a solid basement for tuning its topological transport properties. On SrTiO3 (111) substrate, the SnTe film was found to be epitaxial growth only along [001] while not [111] direction. The detailed structural study was performed and a structural model was proposed to elucidate epitaxial growth of the SnTe (001) film. The transport properties of SnTe (001) film were further investigated and a typical weak anti-localization effect was observed. By Pb-doping into SnTe, the bulk carriers were inhibited and its topological surface states were strengthened to induce the enhanced surface transport contribution. With tunable multiple transport channels from the even Dirac cones, the TCI SnTe film systems will have the potential application in future spintronics devices.



中文翻译:

掺铅拓扑晶体绝缘子SnTe(001)膜的结构和拓扑输运

拓扑晶体绝缘体(TCI)作为一种新型的拓扑材料,以其可调的拓扑特性吸引了广泛的研究兴趣。由于其对称的拓扑保护本质,结构研究为调整其拓扑传输特性提供了坚实的基础。在SrTiO 3上在(111)衬底上,发现SnTe膜仅沿[001]而不是[111]方向是外延生长。进行了详细的结构研究,并提出了结构模型以阐明SnTe(001)膜的外延生长。进一步研究了SnTe(001)薄膜的传输性能,观察到典型的弱抗定位作用。通过向SnTe中掺杂Pb,抑制了载流子并增强了其拓扑表面状态,从而诱导了增强的表面传输作用。TCI SnTe薄膜系统具有来自偶数狄拉克锥面的可调多个传输通道,将在未来的自旋电子器件中具有潜在的应用。

更新日期:2020-01-08
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