The metallic phase of molybdenum disulfide (M-MoS₂) and semiconductor phase of molybdenum disulfide (S-MoS₂) was synthesized by hydrothermal method, using cetyltrimethylammonium bromide (CTAB) as a surfactant. The structural and elemental composition confirmed the formation of M-MoS₂ and S-MoS₂. From the morphological analysis layered nanosheets with an inter-layered distance of 0.62 nm for M-MoS₂ and 0.95 nm for S-MoS₂ was observed. Fourier-transform infrared (FT-IR) spectral analysis was used to investigate the existence of CTAB functional group. The peak at 885 cm⁻¹ attributed to the CH₃ bond which confirmed the presence of CTAB in the S-MoS₂. The anodic and cathodic peak separation (E_pp) values of the counter electrode (CE) has showed at 468.28 mV (M-MoS₂) and 540.87 mV (S-MoS₂). The M-MoS₂ thin film shows higher catalytic activity when compared to S-MoS₂ due to more active sites and electronic conductivity. The power conversion efficiency of M-MoS₂ CE based device exhibits higher efficiency compared to S-MoS₂ CE based device.

以十六烷基三甲基溴化铵（CTAB）为表面活性剂，通过水热法合成了二硫化钼的金属相（M-MoS ₂）和二硫化钼的半导体相（S-MoS ₂）。结构和元素组成证实了M-MoS ₂和S-MoS _2的形成。从形态分析中，观察到层间纳米片对于M-MoS ₂为0.62nm ，对于S-MoS ₂为0.95nm。用傅立叶变换红外光谱（FT-IR）分析了CTAB官能团的存在。885 cm ^-1处的峰归因于CH ₃确认CTAB在S-MoS _2中存在的键。对电极（CE）的阳极和阴极峰间距（E _pp）值显示为468.28 mV（M-MoS ₂）和540.87 mV（S-MoS ₂）。与S-MoS ₂相比，M-MoS ₂薄膜具有更高的催化活性，这是因为其具有更多的活性位点和电子电导率。与基于S-MoS ₂ CE的设备相比，基于M-MoS ₂ CE的设备的功率转换效率更高。