In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials opens a new application space for nitride-based devices, including optoelectronic and power electronic applications. Sp²-bonded 2D materials with hexagonal in-plane lattice arrangements and weakly bonded layers can relax the strict requirements of the lattice and thermal mismatches between nitrides and heteroepitaxial substrates. Furthermore, it also allows transferring nitride devices to arbitrary substrates due to weak vdW interaction between 2D materials and nitride overlying layers. In this review, we will focus on the recent progress in the growth of nitrides film and devices on different kinds of 2D materials. The fundamental challenges and the nucleation mechanism on 2D materials are presented by introducing a high density of surface defects. The different functional applications of 2D materials on nitride materials and devices are also discussed in detail. Through the paper, we exhibit the up-to-date state in this field of research and present future perspectives regarding the development of nitride on 2D materials.

近年来，一种基于准范德华力（QvdW）的新型外延方法将二维（2D）材料上的外延三维（3D）氮化物半导体外延，为基于氮化物的器件（包括光电器件）开辟了新的应用空间和电力电子应用。Sp ²具有六角形面内晶格排列和键合弱的层的热键合2D材料可以放宽对晶格的严格要求以及氮化物和异质外延衬底之间的热失配。此外，由于2D材料和氮化物覆盖层之间的弱vdW相互作用，它还允许将氮化物器件转移到任意衬底上。在这篇综述中，我们将重点介绍在不同种类的2D材料上氮化物膜和器件生长的最新进展。通过引入高密度的表面缺陷，提出了2D材料的基本挑战和成核机理。还详细讨论了2D材料在氮化物材料和设备上的不同功能应用。通过论文，