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Highly Efficient Flexible Organic Light Emitting Transistor Based on High‐k Polymer Gate Dielectric
Advanced Optical Materials ( IF 9 ) Pub Date : 2020-01-09 , DOI: 10.1002/adom.201901651
Hongming Chen 1 , Xing Xing 2 , Jingsheng Miao 1 , Changbin Zhao 1 , Miao Zhu 3 , JunWu Bai 1 , Yaowu He 1 , Hong Meng 1
Affiliation  

In this work, the multilayer organic light emitting transistors (OLETs) based on high‐k polymer crosslinked poly(vinyl alcohol) (C‐PVA) as the dielectric layer are studied. The devices show an excellent brightness of 14 500 cd m−2 and a record breaking external quantum efficiency (EQE) of about 9.0% in inert atmosphere. The use of perfluoro(1‐butenyl vinyl ether) polymer (CYTOP) modified C‐PVA as a hydrophobic dielectric affords OLETs with good stability, displaying a maximum brightness of 13 400 cd m−2 and EQE of 7.31% in ambient conditions with high humidity (relative humidity RH = 70%). Furthermore, the flexible OLETs based on CYTOP/C‐PVA dielectric layer show a brightness of 8300 cd m−2 and a peak EQE at 9.01%, which is the first reported flexible OLET with >500 cd m−2 brightness. The excellent OLET device performance is ascribed to the excellent hole transport structure, high efficiency of guest–host system, and the better carrier balance in the emitting layer, which could be a practical strategy to develop high‐performance flexible OLETs. It is proven for the first time that OLETs could achieve such high EQE and brightness, even for flexible OLETs, paving the way for their future application in industry.

中文翻译:

基于高k聚合物栅极电介质的高效柔性有机发光晶体管

在这项工作中,研究了基于高k聚合物交联的聚乙烯醇(C-PVA)作为介电层的多层有机发光晶体管(OLET)。这些器件在惰性气氛中显示出14 500 cd m -2的出色亮度,并打破了约9.0%的创纪录的外部量子效率(EQE)。使用全氟(1-丁烯基乙烯基醚)聚合物(CYTOP)改性的C-PVA作为疏水性电介质可使OLET具有良好的稳定性,在高环境温度下的最大亮度为13400 cd m -2,EQE为7.31%湿度(相对湿度RH = 70%)。此外,基于CYTOP / C-PVA介电层的柔性OLET的亮度为8300 cd m -2峰值EQE为9.01%,这是首次报道的柔性OLET,其亮度> 500 cd m -2。卓越的OLET器件性能归因于出色的空穴传输结构,高效率的宾主系统,以及发射层中更好的载流子平衡,这可能是开发高性能灵活OLET的实用策略。首次证明,即使对于灵活的OLET,OLET仍可达到如此高的EQE和亮度,从而为将来的工业应用铺平了道路。
更新日期:2020-03-20
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