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Study on the Energy Band Regulation of Bi2−xSbxTe3 and Its Application as Mode Locking Material in Low Gain Ultrafast Fiber Laser
Advanced Optical Materials ( IF 9 ) Pub Date : 2020-01-08 , DOI: 10.1002/adom.201901618
Chunyu Song 1 , He Zhang 1 , Liang Jin 1 , Xiaohui Ma 1 , Yonggang Zou 1 , Linlin Shi 1 , Yingtian Xu 1
Affiliation  

Topological insulators (TIs) are widely used as saturable absorbers in ultrafast pulsed fiber lasers, but the low modulation depth and high threshold power of self‐starting mode‐locking limit their application, especially in the field of communication. Five Bi2Te3‐based materials are prepared by designing different doping ratios. The modulation depth is tunable from 4.41% to 51.31%. It is noteworthy that the minimum pump power of self‐starting mode‐locking is only 27.66 mW. In the circumstance of low gain, Kelly sideband is still weak even if the pump power reaches 165 mW. This is significant for the application in the field of laser communication. Density functional theory calculations show that the doping effect leads to the rearrangement of electrons near the Fermi level, which further leads to an increase in the density of states. The average contribution trend of Te pz of the five materials in each energy band near the Fermi level is consistent with the trend of modulation depth. This study suggests that the nonlinearity of Bi2Te3‐based materials can be improved by doping Sb, and stable self‐starting mode‐locking can be achieved at low gain and low pump power, providing a new idea for improving the nonlinearity of materials.

中文翻译:

Bi2-xSbxTe3的能带调节及其在低增益超快光纤激光器中作为锁模材料的应用研究

拓扑绝缘体(TIs)被广泛用作超快脉冲光纤激光器中的可饱和吸收体,但是低调制深度和高自启动锁模阈值功率限制了它们的应用,尤其是在通信领域。五Bi 2 Te 3通过设计不同的掺杂比例来制备基于材料的材料。调制深度可从4.41%调整为51.31%。值得注意的是,自启动锁模的最小泵浦功率仅为27.66 mW。在低增益的情况下,即使泵浦功率达到165 mW,凯利边带仍然很弱。这对于激光通信领域的应用意义重大。密度泛函理论计算表明,掺杂效应会导致电子在费米能级附近发生重排,进而导致态密度增加。在费米能级附近的每个能带中,五种材料的Te p z的平均贡献趋势与调制深度的趋势一致。这项研究表明Bi 2的非线性通过掺杂Sb可以改进基于Te 3的材料,并且可以在低增益和低泵浦功率下实现稳定的自启动锁模,这为改善材料的非线性提供了新的思路。
更新日期:2020-03-20
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