The metallic 1T phase of WS2 (1T-WS2 ), which boosts the charge transfer between the electron source and active edge sites, can be used as an efficient electrocatalyst for the hydrogen evolution reaction (HER). As the semiconductor 2H phase of WS2 (2H-WS2 ) is inherently stable, methods for synthesizing 1T-WS2 are limited and complicated. Herein, a uniform wafer-scale 1T-WS2 film is prepared using a plasma-enhanced chemical vapor deposition (PE-CVD) system. The growth temperature is maintained at 150 °C enabling the direct synthesis of 1T-WS2 films on both rigid dielectric and flexible polymer substrates. Both the crystallinity and number of layers of the as-grown 1T-WS2 are verified by various spectroscopic and microscopic analyses. A distorted 1T structure with a 2a0 × a0 superlattice is observed using scanning transmission electron microscopy. An electrochemical analysis of the 1T-WS2 film demonstrates its similar catalytic activity and high durability as compared to those of previously reported untreated and planar 1T-WS2 films synthesized with CVD and hydrothermal methods. The 1T-WS2 does not transform to stable 2H-WS2 , even after a 700 h exposure to harsh catalytic conditions and 1000 cycles of HERs. This synthetic strategy can provide a facile method to synthesize uniform 1T-phase 2D materials for electrocatalysis applications.

中文翻译：

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高效稳定制氢反应的1T-WS2薄膜的晶圆级和低温生长。

WS2的金属1T相（1T-WS2）可以促进电子源和活性边缘位点之间的电荷转移，可以用作制氢反应（HER）的有效电催化剂。由于WS2的半导体2H相（2H-WS2）本质上是稳定的，因此合成1T-WS2的方法受到限制和复杂。在此，使用等离子体增强化学气相沉积（PE-CVD）系统制备均匀的晶片级1T-WS2膜。生长温度保持在150°C，可在刚性电介质和柔性聚合物基板上直接合成1T-WS2膜。生长的1T-WS2的结晶度和层数均通过各种光谱和显微镜分析进行了验证。使用扫描透射电子显微镜观察到扭曲的1T结构具有2a0×a0超晶格。1T-WS2膜的电化学分析表明，与以前报道的未经处理的和平面的1T-WS2膜（通过CVD和水热法合成）相比，其催化活性和耐久性高。即使在恶劣的催化条件下暴露700 h和HER循环1000次后，1T-WS2也不会转变为稳定的2H-WS2。这种合成策略可以提供一种简便的方法来合成用于电催化应用的均匀1T相2D材料。即使在恶劣的催化条件下暴露700小时和HER循环1000次之后。这种合成策略可以提供一种简便的方法来合成用于电催化应用的均匀1T相2D材料。即使在恶劣的催化条件下暴露700小时和HER循环1000次之后。这种合成策略可以提供一种简便的方法来合成用于电催化应用的均匀1T相2D材料。