AlGaN-based ultraviolet-A (UVA) light-emitting-diodes (LEDs) at emission under 330 nm are of great importance for numerous applications, including medicine and photochemical technologies. In this Letter, a highly relaxed n-AlGaN electron injection layer (EIL) underneath the multi-quantum wells (MQWs) for the suppression of both threading dislocation densities and piezoelectric effect was attempted. When the Ga-rich n-AlGaN EIL in the UVA LED was relaxed up to 75%, the full width at half-maximum values of the X-ray rocking curves for the (10–12) planes were reduced from our previous value of approximately 793 to 564 arcsec. Subsequently, a maximum light power of 3.1 mW was achieved in the 326 nm band UVA LED. However, carrier confinement and transport issues in the MQWs were observed. To resolve these issues of carrier confinement and transport, we provide a short roadmap for experimental efforts to realize an internal quantum efficiency (IQE) beyond 53% in AlGaN UVA-MQWs.

中文翻译：

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在326 nm的UVA发射和UVA LED的单峰操作下，AlGaN量子阱的内部量子效率超过53％

在330 nm以下发射的基于AlGaN的UV-A（UVA）发光二极管（LED）对于包括医学和光化学技术在内的许多应用而言都至关重要。在这封信中，试图在多量子阱（MQW）下方的高度弛豫的n-AlGaN电子注入层（EIL）用于抑制穿线位错密度和压电效应。当将UVA LED中的富含Ga的n-AlGaN EIL放宽到75％时，（10-12）平面的X射线摇摆曲线的半峰全宽比我们先前的值减小了。大约793至564 arcsec。随后，在326 nm波段的UVA LED中获得了3.1 mW的最大光功率。但是，在MQW中发现了承运人的限制和运输问题。为了解决承运人的限制和运输问题，