The operation of an FTO/[SnI₄{(C₆H₅)₂SO}₂]/Cu memristor is based on the Schottky barrier modulation due to electron trapping/detrapping at the interface states. The presented memristive bipolar device has an asymmetric current–voltage characteristic and multiple resistance states, which can be achieved by the application of impulses with different amplitudes and durations. STDP measurement performed with symmetric sawtooth voltage pulses results in the asymmetric Hebbian-like learning pattern. The incorporation of the device in a particular type of the reservoir system—a single node echo state machine—allowed observation of signal processing in a feedback-loop equipped system: classification according to the initial pulse amplitude and generation of pulse sequences of a random length.

中文翻译：

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回声状态机中包含的多值[SnI ₄ {（C ₆ H ₅）₂ SO} ₂ ]忆阻器的神经形态应用

FTO / [SnI ₄ {（C ₆ H ₅）₂ SO} _2的操作] / Cu忆阻器基于肖特基势垒调制，这归因于界面态的电子俘获/去俘获。提出的忆阻双极型器件具有不对称的电流-电压特性和多个电阻状态，这可以通过施加具有不同幅度和持续时间的脉冲来实现。用对称的锯齿电压脉冲执行STDP测量会产生非对称的类似Hebbian的学习模式。将该设备并入特定类型的储层系统中（单节点回波状态机），可以观察配备反馈回路的系统中的信号处理：根据初始脉冲幅度进行分类并生成随机长度的脉冲序列。