The development of thin film dielectrics having both high energy density and energy conversion efficiency, as well as good thermal stability, is necessary for practical application in high‐temperature power electronics. In addition, there is a demand for the development of new Pb‐free high‐energy density dielectric materials due to environmental concerns. In this regard, thin films of weakly coupled relaxors based on solid solutions of BaTiO₃–BiMeO₃ have shown good promise, because they exhibit a remarkably large polarization over a wide temperature range. Nevertheless, the performance of Pb‐free thin films has lagged behind that of their Pb‐based counterparts in terms of thermal stability and energy conversion efficiency. Toward this end, most recent studies on BaTiO₃–BiMeO₃ systems have focused on the optimization of material composition, while relatively less attention has been paid to other aspects such as defect chemistry and crystallographic texture. In this study, we examine the effects of A‐site vacancy and crystallographic texture on the energy storage performance of BaTiO₃–BiScO₃ thin films synthesized using pulsed laser deposition (PLD). It is shown that a high energy storage density (W_r) of ~28.8 J/cm³ and a high efficiency of η >90% are achieved through a combination of moderate A‐site vacancy concentration and (110) crystallographic texture. Furthermore, W_r remains nearly temperature independent while a high efficiency of η >80% is maintained for temperatures up to 200°C, which constitutes one of the best performances for Pb‐free ferroelectric films for high‐temperature capacitor applications.

中文翻译：

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A位缺陷和110纹理的BaTiO3-BiScO3薄膜的高储能效率和热稳定性

具有高能量密度和能量转换效率以及良好的热稳定性的薄膜电介质的开发对于高温电力电子中的实际应用是必要的。此外，由于对环境的关注，还需要开发新型的无铅高能密度介电材料。在这方面，基于BaTiO ₃ -BiMeO ₃固溶体的弱耦合弛豫薄膜显示出良好的前景，因为它们在很宽的温度范围内表现出明显的极化作用。但是，在热稳定性和能量转换效率方面，无铅薄膜的性能落后于其基于铅的薄膜。为此，关于BaTiO _3的最新研究–BiMeO ₃系统专注于材料成分的优化，而对其他方面的关注相对较少，例如缺陷化学和晶体学纹理。在这项研究中，我们研究了A位空位和晶体织构对使用脉冲激光沉积（PLD）合成的BaTiO ₃ -BiScO ₃薄膜的能量存储性能的影响。结果表明， 通过适度的A位空位浓度和（110）晶体织构相结合，可以实现〜28.8 J / cm ³的高能量存储密度（W _r）和η > 90％的高效率。此外，W _r保持几乎 不受温度影响，同时在高达200°C的温度下仍保持η > 80％的高效率，这是用于高温电容器应用的无铅铁电薄膜的最佳性能之一。