High-performance hybrid graphene photodetectors were prepared with endohedral fullerenes deposited on graphene using electrophoretic methods for the first time. Endohedral Sc₃N@C₈₀, which acts as an electron acceptor, was used and the ensuing electronic and optoelectronic properties were measured. Another endohedral fullerene, La@C₈₂, was also adsorbed on graphene, which acts as an electron donor. Upon optical illumination, for the Sc₃N@C₈₀–graphene hybrid, the photoinduced free holes are injected into graphene, increasing the hole carrier concentration in graphene, while the photoexcited electrons remain in Sc₃N@C₈₀; this leads to a high photoresponsivity of ∼10⁹ A W⁻¹, detectivity D of ∼10¹⁵ Jones, and external quantum efficiency EQE ∼ 10⁹ % for the Sc₃N@C₈₀–graphene hybrid. This is ∼10 times higher compared to other reports of quantum dot-graphene and few layer MoS₂–graphene heterostructures. Similarly, for the La@C₈₂–graphene hybrid, ∼ 10⁸ A W⁻¹, D ∼ 10¹⁴ Jones, and EQE ∼ 10⁶ % were achieved, with electrons being injected into graphene. The exceptional performance gains achieved with both types of hybrid structures confirms the potential of endohedrals to dope graphene for high performance optoelectronic devices using a facile and scalable fabrication process.

中文翻译：

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Sc3N @ C80和La @ C82掺杂的石墨烯用于新型光电器件

首次使用电泳方法在石墨烯上沉积了内面富勒烯制备了高性能混合石墨烯光电探测器。使用了作为电子受体的Endohedral Sc ₃ N @ C ₈₀，并测量了随之产生的电子和光电性能。另一个内层富勒烯La @ C ₈₂也被吸附在石墨烯上，石墨烯作为电子给体。在光学照明下，对于Sc ₃ N @ C _80-石墨烯杂化物，将光致自由空穴注入到石墨烯中，从而增加了石墨烯中的空穴载流子浓度，而光激发电子保留在Sc ₃ N @ C _80中。这导致了高光响应性的〜10 ⁹ AW ^-1，探测d〜10个的^15个琼斯，和外部量子效率EQE〜10 ⁹％，为钪₃ Ñ@ C_ ₈₀ -graphene混合。与其他有关量子点-石墨烯和极少量的MoS _2-石墨烯异质结构的报道相比，这大约高10倍。类似地，当La @ C_ ₈₂ -graphene混合， 〜10 ⁸ AW ^-1，d〜10个¹⁴ Jones和EQE〜10 ⁶通过将电子注入到石墨烯中，获得了％。两种类型的混合结构均获得了卓越的性能提升，这证实了内面体使用便捷且可扩展的制造工艺将石墨烯掺入高性能光电器件的潜力。