This contribution presents a new approach to rapid and low-temperature plasma-chemical crystallization of perovskite films. Chlorine-incorporated perovskite (MAPbI 3–x Cl x ) films were exposed to diffuse atmospheric hydrogen (H 2 ) plasma immediately after their deposition. Several types of surface characterization techniques were used to investigate the effect of the H 2 plasma on the surface of the perovskite films. Since the H 2 plasma was generated at a low temperature (≤ 70 °C), there was no considerable damage to the plasma-treated perovskite films—although the morphology and chemistry changed significantly. H 2 plasma had a range of effects on the surface of the perovskite films: (1) changes in the chemical composition of the perovskite surface without removal of lead; (2) modification of the optoelectrical band structure; (3) crystallization of the perovskite film; and (4) the grain of the surface became highly ordered. The results presented demonstrate that H 2 plasma is a rapid and low-cost method for the manufacture of crystallized perovskite films. The method may be considered a significant step towards low-temperature, annealing-free crystallization of perovskite films.

中文翻译：

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冷氢常压等离子体结晶钙钛矿薄膜的新方法

这一贡献为钙钛矿薄膜的快速低温等离子体化学结晶提供了一种新方法。掺氯钙钛矿（MAPbI 3-x Cl x ）薄膜在沉积后立即暴露于扩散的大气氢（H 2 ）等离子体中。几种类型的表面表征技术用于研究 H 2 等离子体对钙钛矿薄膜表面的影响。由于 H 2 等离子体是在低温 (≤ 70 °C) 下产生的，因此等离子体处理的钙钛矿薄膜没有明显损坏——尽管形态和化学性质发生了显着变化。H 2 等离子体对钙钛矿薄膜的表面有一系列影响：（1）在不去除铅的情况下改变钙钛矿表面的化学成分；(2) 光电能带结构的修饰；(3)钙钛矿薄膜的结晶；(4)表面的晶粒变得高度有序。所呈现的结果表明，H 2 等离子体是一种用于制造结晶钙钛矿薄膜的快速且低成本的方法。该方法可以被认为是朝着钙钛矿薄膜低温、无退火结晶迈出的重要一步。