Spin–orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through spin-torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of this interconversion at room temperature remains elusive. Here, we demonstrate strongly enhanced room-temperature spin-to-charge interconversion in graphene driven by the proximity of WS₂. By performing spin precession experiments in appropriately designed Hall bars, we separate the contributions of the spin Hall and the spin galvanic effects. Remarkably, their corresponding conversion efficiencies can be tailored by electrostatic gating in magnitude and sign, peaking near the charge neutrality point with an equivalent magnitude that is comparable to the largest efficiencies reported to date. Such electric-field tunability provides a building block for spin generation free from magnetic materials and for ultra-compact magnetic memory technologies.

自旋轨道耦合是一种强大的工具，可以相互转换电荷和自旋电流，并通过自旋扭矩现象控制磁性材料的磁化。然而，尽管现有散装材料的多样性以及最近出现的界面和低维效应，但在室温下控制这种相互转化仍然难以捉摸。_{在这里，我们展示了由 WS 2}的接近度驱动的石墨烯中的室温自旋到电荷相互转换的强烈增强. 通过在适当设计的霍尔棒中进行自旋进动实验，我们将自旋霍尔的贡献和自旋电偶效应分开。值得注意的是，它们相应的转换效率可以通过大小和符号的静电门控来调整，在电荷中性点附近达到峰值，其等效量级与迄今为止报道的最大效率相当。这种电场可调性为无磁性材料的自旋生成和超紧凑磁存储器技术提供了基础。