Memristors with simple two-terminal structures have great potential for use in high-density memory and neuromorphic devices. Many neuromorphic behaviors can be imitated using a two-terminal device. Molybdenum disulfide (MoS₂) is a two-dimensional (2D) semiconductor ideal for use as the resistive switching layer in memristor applications. Compared with traditional transition metal oxides, 2D MoS₂ memristors have ultrathin thickness, good flexibility, high transparence, and tunable characteristics. Because of the extensive research in this field in recent years, many methods for synthesizing large-area (4–6 in.) monolayer MoS₂ have been investigated, one of the most promising being chemical vapor deposition. In this Review, the characteristics of MoS₂ will first be introduced. Thereafter, methods related to the growth and fabrication of MoS₂, such as mechanical exfoliation, solution-based synthesis, and vacuum processes, will be reviewed. Moreover, memristors based on MoS₂ will be divided and introduced according to the resistance switching mechanisms. Finally, we will conclude by discussing the challenges and perspectives related to MoS₂ memristors.

中文翻译：

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制作二硫化钼忆阻器

具有简单的两末端结构的忆阻器具有用于高密度记忆和神经形态装置的巨大潜力。可以使用两个终端设备来模仿许多神经形态行为。二硫化钼（MoS ₂）是一种二维（2D）半导体，非常适合用作忆阻器应用中的电阻开关层。与传统的过渡金属氧化物相比，2D MoS ₂忆阻器具有超薄的厚度，良好的柔韧性，高透明度和可调性。由于近年来在该领域的广泛研究，已研究了许多合成大面积（4–6英寸）单层MoS _2的方法，其中最有希望的方法之一是化学气相沉积。在这篇评论中，MoS的特征首先将介绍₂。此后，将审查与MoS ₂的生长和制造有关的方法，例如机械剥离，基于溶液的合成和真空工艺。此外，将根据电阻切换机制来划分和引入基于MoS _2的忆阻器。最后，我们将通过讨论与MoS ₂忆阻器相关的挑战和观点来得出结论。