Recent progress in the synthesis of high stability inorganic perovskite nanocrystals (NCs) has led to their increasing use in broadband photodetectors. These NCs are of particular interest for the UV range as they have the potential to extend the wavelength range of photodetectors based on traditional materials. Here we demonstrate a defect-assisted high photoconductive gain in graphene transistors decorated with all-inorganic cesium lead halide perovskite NCs. The photoconductive gain in the UV–vis wavelength range arises from the charge transfer between the NCs and graphene and enables observation of high photoconductive gain of 10⁶ A/W. This is accompanied by a giant hysteresis of the graphene resistance that is strongly dependent on electrostatic gating and temperature. Our data are well described by a phenomenological macroscopic model of the charge transfer from bound states in the NCs into the graphene layer, providing a useful tool for the design of high-photoresponsivity perovskite/graphene transistors.

中文翻译：

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钙钛矿装饰的石墨烯晶体管中缺陷辅助的高光导紫外可见增益。

高稳定性无机钙钛矿纳米晶体（NCs）合成的最新进展已导致其在宽带光电探测器中的使用越来越多。这些NC对于UV范围特别重要，因为它们有可能扩展基于传统材料的光电探测器的波长范围。在这里，我们证明了在装饰有全无机铯卤化铅钙钛矿型NC的石墨烯晶体管中，缺陷辅助的高光电导增益。UV-vis波长范围内的光电导增益来自NC和石墨烯之间的电荷转移，可观察到10 ⁶的高光电导增益A / W。这伴随着石墨烯电阻的巨大滞后，该滞后很大程度上取决于静电门控和温度。电荷从NC的结合态转移到石墨烯层的现象宏观模型很好地描述了我们的数据，为设计高光响应性钙钛矿/石墨烯晶体管提供了有用的工具。