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Dissolvable Memristors for Physically Transient Neuromorphic Computing Applications
ACS Applied Electronic Materials ( IF 4.7 ) Pub Date : 2019-12-13 , DOI: 10.1021/acsaelm.9b00670
Zheng-Dong Luo 1 , Ming-Min Yang 1 , Marin Alexe 1
Affiliation  

Memristors that can emulate a biological synapse have provided a promising paradigm for highly efficient neuromorphic computing applications. Integrating such an advanced computing architecture into physically transient electronic systems could enable future multifunctional and smart transient electronics. Therefore, water dissolvable memristors with high destruction speed, robust memristive characteristics, synaptic operation, and excellent compatibility with a broad set of substrates are highly sought after. We report here a physically transient memristor made from a water-soluble metal oxide, i.e., amorphous Sr3Al2O6 (SAO). The fabricated SAO-based memristors are shown to exhibit excellent memristive properties such as a high switch OFF/ON ratio of ∼106, long retention, and superior endurance as well as synaptic functionalities like spike-timing-dependent plasticity. Moreover, the SAO layer can be grown at room temperature with precise thickness control by pulsed laser deposition, suggesting facile integration of SAO onto any flexible/rigid substrates for versatile transient applications. This work demonstrates that SAO-based water dissolvable memristors could provide a promising solution for future physically transient neuromorphic electronics.

中文翻译:

用于物理瞬态神经形态计算应用的可溶解忆阻器

可以模拟生物突触的忆阻器为高效的神经形态计算应用提供了一个有希望的范例。将这种先进的计算架构集成到物理瞬变电子系统中,可以实现未来的多功能和智能瞬变电子。因此,高度追求具有高破坏速度,鲁棒的忆阻特性,突触操作以及与多种基质的优异相容性的水溶性忆阻剂。我们在这里报告了一种由水溶性金属氧化物(即非晶Sr 3 Al 2 O 6(SAO))制成的物理瞬态忆阻器。制成的基于SAO的忆阻器表现出出色的忆阻特性,例如约10的高开关OFF / ON比6,长期保留,卓越的耐力以及突触功能,如依赖于尖峰时间的可塑性。此外,SAO层可以在室温下通过脉冲激光沉积控制厚度而精确生长,这表明SAO可以轻松集成到任何柔性/刚性基板上,以实现多种瞬态应用。这项工作表明,基于SAO的水溶性忆阻器可以为未来的瞬态神经形态电子学提供有希望的解决方案。
更新日期:2020-01-06
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