The degree of enhancement in radiative recombination in ensembles of semiconductor nanowires after chemical treatment is quantified within a derived limit by correlating the energy released during the photoemission processes of the light–matter reaction and the effective carrier recombination lifetimes. It is argued that the usage of surface recombination velocity or surface saturation current density as passivation metrics that assess the effectiveness of surface passivation does not provide strict and universal theoretical bounds within which the degree of passivation can be confined. In this context, the model developed in this study provides a broadly applicable surface passivation metric for direct energy bandgap semiconductor materials. This is because of its reliance on the dispersion in energy and lifetime of electron–hole recombination emission at room temperature, in lieu of the mere dependence on the ratio of peak emission spectral intensities or temperature- and power-dependent photoluminescence measurements performed prior and subsequent to surface treatment. We show that the proposed quantification method, on the basis of steady-state and transient photoluminescence measurements performed entirely at room temperature, provides information about the effectiveness of surface state passivation through a comparison of the dispersion in carrier lifetimes and photon energy emissions in the nanowire ensemble before and after surface passivation. Our measure of the effectiveness of a surface passivation protocol is in essence the supremum of lower bounds one can derive on the product of Δt and ΔE.

中文翻译：

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时间-能量量子不确定性：量化低尺寸半导体表面缺陷钝化协议的有效性

在化学处理后的半导体纳米线集合体中，辐射重组的增强程度可通过将光-物质反应的光发射过程中释放的能量与有效载流子复合寿命相关联，在导出的极限内进行量化。有人认为，使用表面复合速度或表面饱和电流密度作为评估表面钝化效果的钝化度量标准并不能提供严格且通用的理论范围，在此范围内可以限制钝化程度。在这种情况下，本研究开发的模型为直接能带隙半导体材料提供了广泛适用的表面钝化度量。这是因为它依赖于室温下电子-空穴复合发射的能量分布和寿命，而不是仅仅依赖于峰值发射光谱强度比或之前和之后进行的温度和功率相关的光致发光测量进行表面处理。我们表明，所提出的量化方法基于完全在室温下进行的稳态和瞬态光致发光测量，通过比较载流子寿命的分散程度和表面钝化前后纳米线集合中的光子能量发射，可以提供有关表面态钝化有效性的信息。我们对表面钝化协议有效性的度量实质上是可以根据Δ的乘积得出的下界的最大值t和ΔE。